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2013年学会発表

2013 MRS FALL MEETING

Insulating and Dielectric Properties of an Individual Titania Nanosheet
○Daisuke Ogawa 1, Tomoteru Fukumura 1,2,3, Minoru Osada 3,4, Takayoshi Sasaki 3,4 and Tetsuya Hasegawa 1,2,3
1The Univ. of Tokyo, Japan, 2 Kanagawa Academy of Science and Technology (KAST), 3 Japan Science and Technology Agency (CREST) and 4 National Institute for Materials Science (NIMS)

2013 JSAP-MRS Joint Symposia

[18p-M1-4] Study on SnO2 Transparent Conductive Thin Films by Pulsed Laser Deposition (Invited)
○Shoichiro Nakao 1,2, Naoomi Yamada 3, Yasushi Hirose 1,2,4 and Tetsuya Hasegawa 1,2,4
1Kanagawa Academy of Science and Technology (KAST), 2 Japan Science and Technology Agency, CREST, 3Chubu Univ. and 4The Univ. of Tokyo, Japan

第74回応用物理学会秋季学術講演会(同志社大学京田辺キャンパス、9月)

[16p-D3-1] LaVOxNyエピタキシャル薄膜の作製及び物性評価
○佐野真仁1,3,廣瀬靖1,2,3,中尾祥一郎2,3,楊長1,2,3,岡崎壮平2,3,福村知昭1,2,3,石井聡4,笹公和4,関場大一郎4,福谷克之5,長谷川哲也1,2,3
東大院理1,JST-CREST2,KAST3,UTTAC4,東大生研5
[16p-P8-19] Electrical Transport Properties of Self-buffered Anatase TiO2
○(D)Thantip Krasienapibal1,福村知昭1,2,3,廣瀬靖1,2,3,迫龍太4,長尾雅則4,綿打敏司4,田中功4,長谷川哲也1,2,3
Univ. of Tokyo1,JST-CREST2,KAST3,Univ. of Yamanashi4
[17a-B4-2] 酸フッ化インジウム(InOxFy)エピタキシャル薄膜の作製
○岡崎壮平1,2,廣瀬靖1,2,3,中尾祥一郎1,2,楊長1,2,3,長谷川哲也1,2,3 KAST1,JST-CREST2,東大院理3
[17a-D3-1] アナターゼ型TixTa1-xO1+yN1-z薄膜のエピタキシャル成長
○鈴木温1,2,3,廣瀬靖1,2,3,岡大地1,2,3,中尾祥一郎2,3,松崎浩之4,福谷克之5,石井聡6,笹公和6,関場大一郎6,福村知昭1,2,3,長谷川哲也1,2,3
東大院理1,KAST2,JST-CREST3,東大院工4,東大生研5,UTTAC6
[17a-D3-7] 幾何学的フラストレーション構造を持ったパイロクロア型Bi2Ti2O7薄膜のエピタキシャル成長
○山竹恭平1,Jie Wei1,福村知昭1,2,長谷川哲也1,2
東大院理1,JST-CREST2
[17p-B4-6] TiO2-NbO2固溶体シード層を用いてスパッタ成膜したTa:SnO2透明導電膜(Ⅱ)
○服部祐樹1,中尾祥一郎2,3,二宮善彦1,佐藤厚1,長谷川哲也2,3,山田直臣1
中部大1,KAST2,東大3

[18a-C7-3]Epitaxial Growth of Li3xLa2/3-xTiO3 Thin Film on Perovskite Substrates by Pulsed Laser Deposition

○(D)Jie Wei1, Tomoteru Fukumura1,2, Yasushi Hirose1,2,3, Tetsuya Hasegawa1,2,3
The Univ. of Tokyo1, JST-CREST2, KAST3
[18p-D3-16] トポタクティック反応によるSrFeOx薄膜のフッ素置換
○片山司1,近松彰1,2,廣瀬靖1,2,3,高木亮介1,神坂英幸1,2,福村知昭1,2,長谷川哲也1,2,3
東大1,JST-CREST2,KAST3
[18p-D3-17] ポリフッ化ビニリデンを用いたRNiO3 (R = La, Nd)薄膜へのフッ素ドープ
○小野塚智也1,近松彰1, 2,片山司1,福村知昭1, 2,長谷川哲也1, 2, 3
東大院理1,JST-CREST2,KAST3
[19a-P3-12] ジルコニアの酸素イオン伝導におけるアニオンドープの効果と電荷状態の第一原理計算
○岡真悠子1,神坂英幸1,2,福村知昭1,2,長谷川哲也1,2,3
東大院理1,JST-CREST2,KAST3
[20p-C7-3]反応性パルスレーザー堆積法によるCoOxNy薄膜のエピタキシャル成長
○高橋純平1,2,廣瀬靖1,2,3,中尾祥一郎2,3,楊長1,2,3,岡崎壮平2,3,福村知昭1,2,3,長谷川哲也1,2,3
東大1,KAST2,JST-CREST3

第5回日本化学会新領域研究グループ「液相高密度エネルギーナノ反応場」研究会 、(2013年8月、お台場)

Ag, Coナノロッド構造を担持したTiO2薄膜の光電変換特性
渡部 愛理1, 小竹 勇己2, 鎌田 義臣2, 近松 彰1,3, 廣瀬 靖1,3,4,
上野 貢生2, 三澤 弘明2, 長谷川 哲也1,3,4
東大院理1, 北大電子研2, JST-CREST3, KAST4

The International Photochemistry Conference ICP2013 (7月、Leuven, Belguim)

Local surface plasmon resonance and photoelectric conversion of TiO2 films with self-assembled Ag/Co nanostructures
○Watanabe, Anri1, Kotake, Yuki2, Chikamatsu, Akira1,
Hirose, Yasushi1,Ueno, Kosei2, Hasegawa, Tetsuya1, Misawa, Hiroaki2
1The University of Tokyo, 2Hokkaido University

The 19th International Conference on Solid State Ionics, 2013 June, Kyoto, Japan

DFT-BASED THEORETICAL OBSERVATION OF THE IONIC CHARGE STATES DURING THE COLOSSAL IONIC CONDUCTION IN DOPED ZIRCONIA SYSTEMS
Mayuko Oka, Hideyuki Kamisaka, Tomoteru Fukumura, and Tetsuya Hasegawa
Department of Chemistry, School of Science, The University of Tokyo

第16回理論化学討論会、福岡 5月

第一原理計算を用いたFドープTiO2系のキャリア活性化率とTiOF2生成の熱力学
○神坂 英幸、水口 菜々子、山下 晃一、長谷川 哲也
東大院理、東大院工

E-MRS 2013 SPRING MEETING, Strasbourg, France

Epitaxial growth fluorine-doped anatase TiO2 thin films by reactive- pulsed laser deposition
Yasushi Hirose[1,2,3] , Satoru Mohri[1] , Shoichiro Nakao[2,3] , and Tetsuya Hasegawa[1,2,3]
[1] Department of Chemistry, The University of Tokyo
[2] Kanagawa Academy of Science and Technology
[3] CREST, Japan Science and Technology Agency
Dielectric Properties of d0 Perovskite Oxynitride ATaO2 N Epitaxial Thin Films
Daichi Oka1 2 3 , Yasushi Hirose1 2 3 , Hideyuki Kamisaka1 2 3 , Tomoteru Fukumura1 2 3 , Seiji Ito4 , Akira Morita4, Hiroyuki Matsuzaki4, Katsuyuki Fukutani5, Satoshi Ishii6, Kimikazu Sasa6, Daiichiro Sekiba6, Tetsuya Hasegawa1 2 3
1) Department of Chemistry, School of Science, The University of Tokyo
2) Kanagawa Academy of Science and Technology (KAST)
3) CREST, JST
4) Department of Nuclear Engineering and Management, School of Engineering, The University of Tokyo
5) Institute of Industrial Science, The University of Tokyo
6) Tandem Accelerator Complex, University of Tsukuba
Optical and electrical transport properties of anatase TaON epitaxial thin film
A. Suzuki, Y. Hirose, D. Oka, S. Nakao, H. Matsuzaki, K. Fukutani, S. Ishii, K. Sasa, D. Sekiba, T. Fukumura, T. Hasegawa
1) Department of Chemistry, School of Science, The University of Tokyo
2) Kanagawa Academy of Science and Technology (KAST)
3) CREST, JST
4) Department of Nuclear Engineering and Management, School of Engineering, The University of Tokyo
5) Institute of Industrial Science, The University of Tokyo
6) Tandem Accelerator Complex, University of Tsukuba
Lowering the synthesis temperature of anatase TiO2 thin films by oxide- metal interactions
Chang Yang(1,2,3) , Yasushi Hirose(1,2,3) , Shoichiro Nakao(2,3) , and Tetsuya Hasegawa(1,2,3)
(1) Department of Chemistry, the University of Tokyo
(2) Kanagawa Academy of Science and Technology (KAST)
(3) Japan Science and Technology Agency (JST), CRESTs

The 40th International Symposium on Compound Semiconductors Kobe, Japan, from 19th to 23rd of May

Fabrication of NbO2 Thin Films Using Solid Phase Crystallization
Shoichiro Nakao(*1,*2) , Yasushi Hirose(*1,*2,*3) , Tomoteru Fukumura(*1,* 2,*3) , and Tetsuya Hasegawa(*1,*2,*3)
(*1) Kanagawa Academy of Science and Technology (KAST)
(*2) JST, CREST
(*3) Department of Chemistry, The University of Tokyo

8th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-8)

[13pP21] Fabrication of Ta-doped SnO2 Thin Films on Unheated Glass Substrates by Pulsed Laser Deposition
Shoichiro Nakao1,2*) , Yasushi Hirose1,2,3) , and Tetsuya Hasegawa1,2,3)
1) Kanagawa Academy of Science and Technology (KAST), JAPAN
2) Japan Science and Technology Agency, CREST, JAPAN
3) Department of Chemistry, University of Tokyo, JAPAN
[13pP33] Orientation Dependent Conductivity of Anatase Ti1-xNbxO2 Thin Films
N. Yamada1*) , S. Takagi1) , S. Nakao2,3) , Y. Hirose2,3) , and T. Hasegawa2,3)
1) Department of Applied Chemistry, Chubu University, JAPAN
2) Kanagawa Academy of Science & Technology, JAPAN
3) Department of Chemistry, The University of Tokyo, JAPAN
[14aP01] Transparent Conducting Ta-doped SnO2 Films Sputtered on Rutile-type TiO2-NbO2 Solid Solution Seed Layers
Y. Hattori1, *) , T. Asano1) , S. Nakao2,3) , A. Sato1) , Y. Ninomiya1) , T. Hasegawa2,3) , and N. Yamada1)
1) Department of Applied Chemistry, Chubu University, JAPAN
2) Kanagawa Academy of Science & Technology, JAPAN
3) Department of Chemistry, The University of Tokyo, JAPAN
[14pP22] Physical Properties of Anion-Substituted Indium Oxide Epitaxial Thin Films
Sohei Okazaki1,2,*) , Yasushi Hirose1,2,3), Shoichiro Nakao1,2), Yang Chang1,2,3) and Tetsuya Hasegawa1,2,3)
1) Kanagawa Academy of Science and Technology (KAST), JAPAN
2) CREST, Japan Science and Technology Agency (JST), JAPAN
3) Department of Chemistry, The University of Tokyo, JAPAN
[14pP32] A novel high mobility oxynitride semiconductor: anatase TaON epitaxial thin film
A. Suzuki1,2,3,*) , Y. Hirose1,2,3) , D. Oka1,2,3) , S. Nakao2,3) , H. Matsuzaki4) , K. Fukutani5) , S. Ishii6) , K. Sasa6) , D. Sekiba6) , T. Fukumura1,2,3) and T. Hasegawa1,2,3)
1) Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, JAPAN
2) Kanagawa Academy of Science and Technology, 3-2-1 Sakado, Takatsu-ku, Kawasaki, JAPAN
3) CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, JAPAN
4) School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, JAPAN
5) Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, JAPAN
6) Tandem Accelerator Complex, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, JAPAN

APS March Meeting, 2013 March, Baltimore, Maryland

Dielectric properties of perovskite oxynitride epitaxial thin films
Daichi Oka, Yasushi Hirose, Hideyuki Kamisaka, Tomoteru Fukumura, Seiji Ito, Akira Morita, Hiroyuki Matsuzaki, Katsuyuki Fukutani, Satoshi Ishii, Kimikazu Sasa, Daiichiro Sekiba and Tetsuya Hasegawa
DFT-base first-principle calculation of the carrier activation raio in the F-doped anatase TiO2 and the thermodymanic analysis of the formation of TiOF2 phases
Hideyuki Kamisaka, Nanako Mizuguchi, Koichi Yamashita, Tetsuya Hasegawa

第60回応用物理学会春季学術講演会(神奈川工科大学、3月)

[27p-A1-1] Ag, Coナノ構造を有するTiO2薄膜の光電変換
○渡部愛理1,小竹勇己2,近松彰1,3,廣瀬靖1,3,4,上野貢生2 ,長谷川哲也1,3,4,三澤弘明2
東大院理1,北大電子科学研究所2,JST-CREST3,KAST4
[27a-PB2-16] 固相成長によるNbO2薄膜の作製
○中尾祥一郎1,2,廣瀬靖1,2,3,福村知昭1,2,3,長谷川哲也1,2,3
KAST1,CREST2 ,東大理3
[27a-PB2-22] CaH2反応によるSrCuO2薄膜の構造変化
○Ryosuke Takagi1,Akira Chikamatsu1,2,Tsukasa Katayama1,Yasushi Hirose1,2,3,Tomoteru Fukumura1,2,Tetsuya Hasegawa1,2,3
東大院理1,JST‐CREST2 ,KAST3
[27a-PB2-23] SrTiO3基板上に堆積させたSrRu0.9Cr0.1O3薄膜の輸送・磁気特性
○栗田佳織1,近松彰1,2,重松圭1,組頭広志3, 福村知昭1,2,長谷川哲也1,2,4
東大院理1,JST-CREST2,KEK-IMSS3, KAST4
[28a-F2-6] NdNiO2エピタキシャル薄膜の作製と物性評価
○小野塚智也1,近松彰1,2,片山司1,重松圭1,福村知昭1,2,長谷川哲也1,2,3
東大理1,JST-CREST2,KAST3
[28a-F2-11] Sr2MgMoO6-δ単結晶薄膜の電気特性・電子状態評価
○重松圭1,近松彰1,2,福村知昭1,2,豊田智史3,池永英司4 ,長谷川哲也1,2,5
東大院理1 ,JST-CREST2,KEK-IMSS3,JASRI/SPring-84 ,KAST5
[29a-F1-4] Electrical transport properties of porous Bi thin films
○Youngok Park1, Yasushi Hirose1,2,3, Shoichiro Nakao2,3, Tomoteru Fukumura1,2,3, Jinho Kim4, Jimmy Xu4, Tetsuya Hasegawa1,2,3
University of Tokyo1, JST-CREST2, Kanagawa Academy of Science and Technology(KAST)3, Brown University4
[29p-F2-1] 酸窒化インジウム(InOxNy)エピタキシャル薄膜の物性
○岡崎壮平1,2,廣瀬靖1,2,3,中尾祥一郎1,2,楊長1,2,3,鈴木温1,2,3,岡大地1,2,3,長谷川哲也1,2,3
東大院理1 ,KAST2,JST-CREST3
[30a-F1-6] パルスレーザー堆積法を用いたMn4Nエピタキシャル薄膜の作製と評価
Xi Shen1,○近松彰1,2,廣瀬靖1,2,3,福村知昭1,2,長谷川哲也1,2,3
東大院理1,JST-CREST2,KAST3
[30a-F1-7] 多層膜プリカーサーを用いたY2O2Bi薄膜の固相エピタキシャル成長
○清良輔1,福村知昭1,2,長谷川哲也1,2
東大院理1,JST-CREST2
[30a-F1-9] CaH2によるSrFeO2薄膜へのトポタクティック水素注入
○片山司1,近松彰1,2,廣瀬靖1,2,3,福村知昭1,2,長谷川哲也1,2,3
東大院理1,JST-CREST2,KAST3
[30a-G7-7] 第一原理計算を用いたFドープTiO2系のキャリア活性化率とTiOF2生成の熱力学
○神坂英幸1,水口菜々子2,山下晃一2,長谷川哲也1
東大院理1,東大院工2